Tungsten Diselenide (WSe2) Few-layer Film

CAS Number 12067-46-8

2D Materials, Low Dimensional Materials, Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)

MSDS

Tungsten Diselenide (WSe2) Few-layer Film CAS 12067-46-8

High purity tungsten diselenide few-layer film

For applications in transistors, sensors, photovoltaics, and photodetectors devices

Tungsten diselenide (WSe₂) few-layer film, CAS number 12067-46-8, based field-effect transistors (FETs) can display high hole mobilities ranging from 350 cm²/Vs at room temperature to the saturating value of ~500 cm²/Vs below 50 K. Tri-layered WSe₂ shows a strong photocurrent response of exceptionally high photo responsivities up to 7 A/W under white light illumination and external quantum efficiencies approaching 40% (under laser illumination at λ = 532 nm).

It also has been demonstrated that the carrier type evolves with increasing WSe₂ channel thickness, from p-type (<3 nm) to ambipolar (~4 nm) and n-type (>5 nm). The thickness dependent carrier type is due to the changes in the bandgap of WSe₂ as a function of the thickness and their band offsets relative to the metal contacts. WSe₂ few-layers also exhibit drastic increase in photoluminescent intensity under the application of uniaxial tensile.

High Purity

≥99.999% Crystal Purity

Worldwide shipping

Quick and reliable shipping

Low Cost

Low Cost Tungsten Diselenide

Applications

Applications in Photovoltaics, Photodetectors, FETs and Biomedical

Technical Data

CAS Number	12067-46-8
Chemical Formula	WSe₂
Molecular Weight	341.76 g/mol
Bandgap	Indirect bandgap
Synonyms	Tungsten selenide, Tungsten(IV) Selenide
Classification / Family	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate	Sapphire - Double Side Polished
Product Code	M2224F11
Size	1 cm × 1 cm*
Growth Method	CVD synthesis
Appearance	Transparent
Purity	>99%
Transparency	>97%
Coverage	>95%
Number of Layers	1
Sheet Resistance	N/A
Transfer Method	Directly grown

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter.

High-quality tungsten diselenide (WSe₂) few-layer films are available on Sapphire as standard. Different substrates of few-layer WSe₂films, including SiO₂/Si, Glass, Silicon and Quartz are also available via custom order.

Please contact us for more information regarding custom products.

MSDS Document

Tungsten Diselenide Few-Layer Film MSDS Sheet

Applications

Field-effect transistors (FETs)
Photodetectors
Photovoltaics
Sensors
Biomedical

Synthesis

Tungsten diselenide (WSe₂) few-layer film was directly grown on a double side polish sapphire.

Literature and Reviews

High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors, N. Pradhan et al., ACS Appl. Mater. Interfaces, 7 (22), 12080–12088 (2015); DOI: 10.1021/acsami.5b02264.
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors, N. Pradhan et al., Sci. Rep., 5, 8979 (2015); DOI: 10.1038/srep08979.
Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study, Y. Li et al., Nanotechnology, 29, 124001 (2018); DOI 10.1088/1361-6528/aaa923.

WSe2 few layers with enzyme mimic activity for high-sensitive and high-selective visual detection of glucose, T. Chen et al., Nanoscale, 9, 11806-11813 (2017); DOI: 10.1039/C7NR03179C.
Enhanced photocatalytic properties of graphene modified few-layered WSe2 nanosheets, B. Yu et al., Appl. Surf. Sci., 400 (1), 420-425 (2017); DOI: 10.1016/j.apsusc.2016.12.015.
Vertical Few-Layer WSe2 Nanosheets for NO2 Sensing, Y. Duan et al., ACS Appl. Nano Mater., 4 (11), 12043–12050 (2021); DOI: 10.1021/acsanm.1c02603.
Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors, M. Chen et al., CS Nano, 11 (1), 1091–1102 (2017); DOI: 10.1021/acsnano.6b08156.
Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors, H. Tang et al., ACS Nano, 11 (12), 12817–12823 (2017); DOI: 10.1021/acsnano.7b07755.
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2, S. Desai et al., Nano Lett., 14 (8), 4592–4597 (2014); DOI: 10.1021/nl501638a.
Stabilizing High-Voltage Lithium-Ion Battery Cathodes Using Functional Coatings of 2D Tungsten Diselenide, S. Maiti et al., ACS Energy Lett., 7 (4), 1383–1391 (2022); DOI: 10.1021/acsenergylett.2c00514.
A Facile Liquid Phase Exfoliation of Tungsten Diselenide using Dimethyl Sulfoxide as Polar Aprotic Solvent to Produce High-quality Nanosheets, P. Kashyap et al., ChemNanoMat, 7 (3), 328-333 (2021); DOI: 10.1002/cnma.202100020.

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Resources and Support

Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

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Tungsten Diselenide (WSe2) Few-layer Film

High purity tungsten diselenide few-layer film

Technical Data

Product Details

MSDS Document

Applications

Synthesis

Literature and Reviews

Related Products

Resources and Support

Viscoelastic Transfer of 2D Material Using PDMS