Bebq2

Bebq2, a blue-fluorescence emitter with excellent charge transport ability

Best for use as an ETL material. Available online for priority dispatch

Bis(10-hydroxybenzo[h]quinolinato)beryllium, known as Bebq2, is the brother of Bepp2 in the Beryllium complex family. It is also a blue-fluorescence emitter with excellent charge transport ability.

When compared with Alq₃ as an electron-transport material, Bebq2 was proven to be superior, even though the ionisation potential and optical band gap of Bebq2 (5.5 eV and 2.7 eV respectively) and Alq3 (5.6 eV and 2.8 eV respectively) are almost the same. The best use for Bebq2 is not as an emitting-layer material or a host material (even though it is a widely used host material), but as an electron-transport material [1].

General Information

* Measurable with an USB spectrometer, see our spectrometer application notes.

Product Details

* Sublimation is a technique used to obtain ultra pure-grade chemicals, see sublimed materials.

Chemical Structure

Device Structure(s)

Device structure	ITO/DNTPD (40 nm)/Bebq2:Ir(piq)3 (50 nm, 4 wt%)/LiF (0.5 nm)/Al (100 nm) [2]
Colour	Red
Max. Current Efficiency	9.38 cd/A
Max. Power Efficiency	11.72 lm W−1

Device structure	ITO/NPB (40 nm)/Bebq2:1 wt% Ir(piq)3 (30 nm)/Bebq2 (20 nm)/LiF (0.5 nm)/Al (100 nm) [3]
Colour	Red
Max. Current Efficiency	12.71 cd/A
Max. Power Efficiency	16.02 lm W−1

Device structure	ITO/MeO-TPD: F4-TCNQ (50 nm, 4 wt%)/NPB (20 nm)/MADN:DSAph (25nm, 7 wt%)/Bebq2 (30 nm)/LiF (1 nm)/Al (200 nm) [4]
Colour	Blue
Max. Luminance	70,645 cd/m2
Max. Current Efficiency	12.7 cd/A
Max. Power Efficiency	9.1 lm W−1

Device structure	Ag (100 nm)/ITO (10 nm)/DNTPD (30 nm)/NPB (44 nm)/Bebq2:3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (31 nm)/Bphen: 5 wt% Li (10 nm)/HATCN (7 nm)/NPB (63 nm)/Bebq2: 3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (40 nm)/Liq (1 nm)/Mg:Ag (10:1; 18 nm)/NPB (60 nm) [5]
Colour	Red
Max. EQE	26.5%
Max. Current Efficiency	95.8 cd/A

Device structure	ITO/NPB (40 nm))/AND:3 wt% DPAVBi (45 nm)/Bebq2 (15 nm)/LiF (1.2 nm)/Al (100 nm) [6]
Colour	Blue
EQE @ 100 cd/m2	8.32%
Current Efficiency @100 cd/m2	19.2 cd/A

Device structure	ITO/PEDOT:PSS (30 nm)/α-NPD (40 nm)/Bebq2:TLEC-025* (1 wt%, 35 nm)/TPBI (40 nm)/LiF (1 nm)/Al (100 nm) [7]
Colour	Red
EQE @ 100 cd/m2	17.1%
Power Efficiency @100 cd/m2	13.6 lm W−1

Device structure	ITO/a-NPB:Bebq2:Ir(piq)3 (1 wt.%, 100 nm)/ LiF (0.5 nm)/Al (100 nm) [8]
Colour	Red
Max. Current Efficiency	9.44 cd/A
Max. Purrent Efficiency	10.62 lm W−1

*For chemical structure information please refer to the cited references

Characterisation (TGA and DSC)

MSDS Documentation

Bebq2 MSDS sheet

Literature and Reviews

1. Influence of the Emission Site on the Running Durability of Organic Electroluminescent Devices, Y. Hamada et al., Jpn. J. Appl. Phys., 34, L824 (1995); http://iopscience.iop.org/1347-4065/34/7A/L824.
2. Efficiency Control in Iridium Complex-Based Phosphorescent Light-Emitting Diodes, B. Diouf et al., Adv. Mater. Sci.&Eng., 2012, 794674 (2012); doi:10.1155/2012/794674.
3. Highly Efficient Simple-Structure Red Phosphorescent OLEDs with an Extremely Low Doping Technology, W. S. Jeon et al., J. Info. Display, 10 (2), 87-91 (2009).