Hafnium Diselenide (HfSe2) Powder and Crystal

CAS Number 12162-21-9

2D Materials, Low Dimensional Materials, Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)

Hafnium Diselenide (HfSe2) Powder and Crystal CAS 12162-21-9

Low price, high purity 2D hafnium diselenide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Technical Data | MSDS | Structure | Literature and Reviews

Hafnium diselenide (HfSe₂), CAS number 12162-21-9, is a layered 2D semiconducting material. It is part of the group IV transition metal dichalcogenides (TMDCs).

2D semiconductor HfSe₂ is increasing in popularity for use in electronic devices due to the existence of natively-compatible HfO₂ with desirable high-κ dielectrics. It is one of the first 2D materials to emulate the technologically-relevant properties of silicon (whilst enabling lower operation power than possible with silicon and its silicon oxide insulator) on a atomically-thin and smaller circuit.

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High purity 2D hafnium diselenide

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Low price Hafnium Diselenide

Powder & Crystals

Available in powder and crystal forms

HfSe₂ has an indirect bandgap with a measured bulk value of Eg = 1.1 eV (similar to that of silicon) and a remarkably high phonon-limited mobility of about 3500 cm²/V·s at room temperature.

We supply low price hafnium diselenide in several different forms for a range of applications.

Hafnium Diselenide Powder

Can be used for preparation of hafnium diselenide nanoplates and ultrathin films

Available in quantities of 1 g

≥99.995% purity

From £350

Hafnium Diselenide Crystals by Size

Can be used to produce single or few-layer hafnium diselenide sheets via mechanical or liquid exfoliation

Small (≥10 mm²) or medium (≥25 mm²) crystals available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary.

Bulk single hafnium diselenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single hafnium diselenide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

Few-layer HfSe₂ nanosheets and nanoparticles can also obtained from hafnium diselenide powder by liquid-exfoliation.

Technical Data

CAS Number	‎12162-21-9
Chemical Formula	HfSe₂
Molecular Weight	336.43 g/mol
Bandgap	~1.1 eV (indirect)
Preparation	Synthetic - Chemical Vapour Transport (CVT)
Structure	‎Octahedral (1T)
Electronic Properties	2D Semiconductor
Melting Point	N/A
Colour	Dark brown
Synonyms	Hafnium selenide, Bis(selanylidene)hafnium
Classification / Family	Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form	Purity
Powder	≥99.995%
Crystal	≥99.999%

Pricing Table

Product Code	Form	Size/Weight*	Price
M2153C1	Powder	1 g	£350
M2153A10	Crystal	Small (≥10 mm²)	£520 ea.
M2153A25	Crystal	Medium (≥25 mm²)	£850 ea.

*typical representative size, areas/dimensions may vary.

Shipping is free for qualifying orders.

Key Product Data

High purity hafnium diselenide suitable for a range of applications
Available in powdered form or in crystal form by weight or size
Low price with free worldwide shipping on qualifying orders

MSDS Documents

Hafnium diselenide powder

Hafnium diselenide crystal

Structure of Hafnium Diselenide

HfSe₂adopts the CdI₂ structure (1T), consisting of a single-layer plane of hexagonal close-packed Hf atoms sandwiched by two-layer planes of hexagonal close-packed Se atoms. The Hf atom is octahedrally coordinated with six selenide chalcogen atoms. The layers are stacked together by weak van der Waals (vdW) forces, and can be exfoliated into thin 2D layers.

The crystal structure of single-layer hafnium diselenide (HfSe₂)

Properties of Hafnium Diselenide

After exfoliation of hafnium diselenide crystal or powder, hafnium diselenide typically has the following properties:

‎Octahedral (1T, space group: P3m1)
Group IV transition metal dichalcogenides (TMDCs)
HfSe₂ has an indirect bandgap with a measured bulk value of Eg = 1.1 eV (similar to that of silicon)
Remarkably high phonon-limited mobility of about 3500 cm²/V·s at room temperature
One of the first 2D materials to emulate the technologically-relevant properties of silicon

Applications of Hafnium Diselenide

Hafnium diselenide (HfSe₂) single crystals can be used to prepare monolayer and few-layer HfS₂ by mechanical or liquid exfoliation.

Hafnium diselenide powder is suitable for liquid chemical exfoliation to prepare HfSe₂ nanosheets and nanoparticles down to few-layer films.

Hafnium diselenide is slightly n-type with an indirect band gap of ∼1.1 eV, making it a great candidate for field-effect transistors and photovoltaic applications. Au-contacted HfSe₂ phototransistors give a high on/off ratio of 10⁶ and mobilities in the range of 2.6–6.5 cm² V⁻¹ s⁻¹, with a high responsivity of 252 A/W and an ultrafast response time of 7.8 ms.

Hf-based TMDs are small bandgap semiconductors possessing large work functions and reasonably high mobility. They are suitable for photovoltaic and FET applications. Ultrathin nanosheets of HfSe₂ can also be built into ultrafast and ultrasensitive phototransistor devices.

Literature and Reviews

Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy, K. E. Aretouli et al., Appl. Phys. Lett. 106, 143105 (2015); doi: 10.1063/1.4917422.
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment, M. Kang et al., Nanoscale, 9, 1645 (2017); DOI: 10.1039/c6nr08467b.
3d transition metal doping-induced electronic structures and magnetism in 1T-HfSe2 monolayers, X. Zhao et al., RSC Adv., 7, 52747–52754 (2017); DOI: 10.1039/c7ra11040e.

HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy, R. Yue et al., ACS Nano, 9 (1), 474–480 (2015);
DOI: 10.1021/nn5056496
Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2, L Yin et al., Appl. Phys. Lett. 109, 213105 (2016); dio: 10.1063/1.4968808.
Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate, M. Kang et al., Appl. Phys. Lett. 106, 143108 (2015); DIO: 10.1063/1.4917458.
Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2, L. Yin et al., Appl. Phys. Lett. 109, 213105 (2016); DIO: 10.1063/1.4968808.
Device Performance Assessment of Monolayer HfSe2: A New Layered Material Compatible With High-k HfO2, A. AlMutairi et al., IEEE Electron Device Lett., , 39 (11), 1772-1775 (2018); DIO: 10.1109/LED.2018.2867957.
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy, R. Yue et al., ACS Nano, 9 (1), 474–480 (2015); DOI: 10.1021/nn5056496.
Electronic and mechanical responses of two-dimensional HfS2, HfSe2, ZrS2, and ZrSe2 from first-principles, M. Salavati, Front. Struct. Civ. Eng., 13(2): 486–494 (2019); DIO: 10.1007/s11709-018-0491-5.

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