NBPhen
CAS Number 1174006-43-9
High Purity Sublimed Materials, Materials, OLED Materials, Semiconducting Molecules, TADF Materials
NBPhen, EIL and HBL material for OLEDs and photovoltaic devices
High-purity (>99.0%) and available online for priority dispatch
NBPhen, full name 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline, is one of the close relatives of BPhen, which is used in OLEDs and photovoltaic devices as an electron-injection layer or hole-blocking layer material. Due to its low evaporation temperature and air stability, caesium azide (CsN3) doped NBphen has also been demonstrated as an efficient electron-injection layer (EIL) capable of replacing lithium fluoride (LiF) in such devices.
OLEDs utilising CsN3 -doped NBPhen as EIL exhibit significantly improved current density-luminance-voltage characteristics.
General Information
| CAS number | 1174006-43-9 |
|---|---|
| Full name | 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline |
| Chemical formula | C44H28N2 |
| Molecular weight | 584.71 g/mol |
| Absorption | λmax 395 nm in THF |
| Fluorescence | λem 412 nm in THF |
| HOMO/LUMO | HOMO = 5.8 eV, LUMO = 2.6 eV [1] |
| Synonyms | 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline |
| Classification / Family | Phenanthroline derivatives, Organic electronics, Electron-injection layer materials (EIL), Hole-blocking layer materials (HBL), TADF materials, Sublimed materials. |
Product Details
| Purity | Sublimed: >99% (HPLC) |
|---|---|
| Melting point | TGA: >340 °C (0.5% weight loss) |
| Appearance | Off-white powder/crystals |
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed Materials.
Chemical Strucutre
Device Structure(s)
| Device structure | ITO (100 nm)/PEDOT:PSS (35 nm)/PLEXCORE UT-314* (20 nm)/PYD2:Cu(I)-iBuPyrPHOS* 1:1 (30 nm)/T2T (20 nm)/NBPhen (30 nm)/LiF (1 nm)/Al [1] |
|---|---|
| Colour | Yellow 
|
| Max. EQE | 11.9% |
| Max. Current Efficiency | 36.0 cd/A |
| Device structure | ITO/HATCN (10 nm)/NPB (30 nm)/TCTA (10 nm)/6 wt% PQ2Ir:TCTA:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2] |
|---|---|
| Colour | Orange 
|
| Max. EQE | 19.6% |
| Max. Current Efficiency | 35.5 cd/A |
| Device structure | ITO/HATCN (10 nm)/NPB (30 nm)/BCzPh (10 nm)/6 wt% PQ2Ir:BCzPh:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2] |
|---|---|
| Colour | Red 
|
| Max. EQE | 20.6% |
| Max. Current Efficiency | 36.0 cd/A |
| Device structure | ITO/MO3 (5 nm)/NPB (75 nm)/C545T:Alq3 (30 nm)/NBPhen (25 nm)/CsN3:NBPhen (5 nm)/Al [3] |
|---|---|
| Colour | Green 
|
| Max. Luminance | 60,000 cd/m2 |
| Max. Current Efficiency | 10.4 cd/A |
| Device structure | ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-p-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4] |
|---|---|
| Colour | Yellow
|
| Max. Power Efficiency | 115.2 lm W-1 |
| Max. EQE | 25.5% |
| Max. Current Efficiency | 80.6 cd/A |
| Device structure | ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-m-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4] |
|---|---|
| Colour | Yellow
|
| Max. Power Efficiency | 102.6 lm W-1 |
| Max. EQE | 25.2% |
| Max. Current Efficiency | 79.8 cd/A |
*For chemical structure information, please refer to the cited references.
MSDS Documentation
NBPhen MSDS sheetPricing
| Grade | Order Code | Quantity | Price |
|---|---|---|---|
| Sublimed (>99% purity) | M2183A1 | 250 mg | £280 |
| Sublimed (>99% purity) | M2183A1 | 500 mg | £460 |
| Sublimed (>99% purity) | M2183A1 | 1 g | £740 |
Literature and Reviews
- Highly Effcient Organic Light-Emitting Diode Using A Low Refractive Index Electron Transport Layer, A. Salehi et al., Adv. Optical Mater., 170019 (2017); DOI: 10.1002/adom.201700197.
- Predicting Operational Stability for Organic Light-Emitting Diodes with Exciplex Cohosts, Z, Wang et al., Adv. Sci., 6, 1802246 (2019); DOI: 10.1002/advs.201802246.
- The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED, X. Chu et al., Phys. Status Solidi A 211, 7, 1605–1609 (2014); DOI: 10.1002/pssa.201431090.