Gate Deposition Mask, Low Density
Low Density Gate Deposition Mask
Enabling good deposition resolution
An evaporation mask for deposition of gate contacts. For use with the low density OFET system. A 100 μm standoff-spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution.
Mask with direct contact (no spacer): For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.
Datasheet
Size | 75 mm x 75 mm |
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Width | 1.7mm without spacer, 1.8mm with spacer (exc. bolts) |
Material | Stainless steel |
Capacity | 12 substrates |