Gate Deposition Mask - ITO OFETs

Gate Deposition Mask

Enabling accurate deposition resolution

An evaporation mask for deposition of gate contacts onto Ossila's pre-patterned ITO substrates (S161). The T-shaped aperture allows the gate to cover the interdigitated source-drain contacts while also providing easy electrical connection via the Ossila USB test board.

Mask with direct contact: For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.

Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.

Datasheet