ITO Glass Substrates, 20 x 15 mm, OFET and Sensing

Pre-Patterned ITO Substrates for OFET and Sensing

For simple fabrication and testing

Transmittance | Characterization | Related Products | Resources and Support

Pre-patterned ITO substrates designed for the fabrication and characterization of transistors and sensing devices without the need for vacuum evaporations or probe stations. Devices can be produced and tested with significantly increased simplicity, making the system ideal for reducing costs of material screening experiments.

Specifications

Substrate Size	20 mm x 15 mm
Pack Size	100 substrates per standard pack
Thickness	1.1 mm
Channel Dimensions* (W x L)	S161: 30 mm × 50 μm S162: 30 mm × 50 μm, 75 μm, 100 μm, 150 μm, and 200 μm
Glass Type	Polished soda lime, float glass
Substrate Coating	Fully oxidized ITO
ITO Thickness	100 nm
ITO Resistance	20 Ω/square
Glass Roughness	<1 nm RMS (by AFM)
ITO Roughness	1.8 nm RMS (by AFM)

* There may be a batch-to-batch variation of ±10 μm in the channel length.

Ossila ITO OFET substrate constant schematic — ITO OFET substrate, constant length

Ossila ITO OFET substrate variable schematic — ITO OFET substrate, variable length

Transmittance of ITO Substrates

Characterization

AFM scan of ITO substrate — 10 µm x 10 µm AFM scan with Z-scale of ±5 nm

AFM of glass surface of ITO substrates — AFM of glass surface (1 µm x 1 µm x 3.5 nm)

Characterization courtesy of Richard T Grant.

20 mm x 15 mm
ITO FET System

20 mm x 15 mm ITO FET System

Substrates and Fabrication

All Substrates and Fabrication

Resources and Support

Evaporation-Free OFET Substrates

The substrates contain pre-patterned ITO source-drain contacts onto which the semiconductor is deposited before a gate insulator is spun on top and finally the gate material finishes the device. All of these layers can be deposited from solution, including the gate using a synthetic metal (such as PEDOT:PSS), meaning no evaporation shadow masks are required. It is possible to make fully-functioning OFETs by solution processing alone, eliminating vacuum evaporation processes.

The substrates are also designed to work with a wide variety of different material systems and deposition techniques. As such, vacuum-deposited semiconductors, gate insulators, and gates can also be used with the appropriate shadow mask.

Solution processed OFET substrate system schematic — Layers typically used with the evaporation-free OFET substrates

The pre-patterned OFET substrates consist of interdigitated ITO fingers to act as the source-drain electrodes. The relatively large channel sizes work to minimize contact effects, so it is less important to match the energy levels of the organic semiconductor and contacts. As such, the intrinsic Poole Frenkel limited mobility of a material can be more easily assessed independent of the HOMO level. The 30 mm channel width also has the additional benefit of producing larger currents, making testing and measurement quicker and requiring less sensitive (and less expensive) equipment.

The transparent nature of the ITO/glass also means that opto-electric experiments can be done with ease (photoconductivity, photo-induced doping in the presence of oxygen, sensing).