FREE shipping on qualifying orders when you spend or more. All prices ex. VAT. Enjoy hassle-free delivery, fulfilled by our EU subsidiary. Backed by our 50 State Delivery Guarantee. Regional distributors also available. Sorry, we are unable to accept orders from or ship to .

It looks like you are using an unsupported browser. You can still place orders by emailing us on info@ossila.com, but you may experience issues browsing our website. Please consider upgrading to a modern browser for better security and an improved browsing experience.


Product Code M2199A1-100mg
Price $338 ex. VAT

TSPO1, fluorescent host or EBL material in TADF-OLED devices

Suitable for efficient electron injection and hole blocking


TSPO1, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, has a structure of triphenylsilane connecting triphenyl phosphine oxide. Comparing with UGH-2, TSPO1 has large permanent dipole moment due to the polar phosphine oxide group and its asymmetric structure.

TSPO1 from Ossila was used in the high-impact paper (IF 14.92)

TSPO1 from Ossila was used in the high-impact paper (IF 14.92), High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence, M. Vasilopoulou et al., Nat. Commun., 12, 4868 (2021); DOI: 10.1038/s41467-021-25135-z.

With a sufficiently high triplet energy (ET ) of 3.36 eV, TSPO1 can be used as fluorescent host or exciton blocking layer materials in TADF-OLED devices. Also with low lying LUMO (ELUMO = 2.52 eV) and HOMO (EHOMO = 6.79 eV), TSPO1 is suitable for efficient electron injection and hole blocking, owing to the electron deficient nature of diphenylphosphine oxide moiety it bears.

General Information


CAS number 1286708-86-8
Full name Diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide
Chemical formula C36H29OPSi
Molecular weight 536.67 g/mol
Absorption λmax 266 nm in DCM
Photoluminescence λmax 322 nm in DCM
HOMO/LUMO HOMO = 6.79 eV, LUMO = 2.52 eV; ET = 3.36 eV [1]
Synonyms Diphenylphosphine oxide-4-(triphenylsilyl)phenyl
Classification / Family Triphenylsilyl derivatives, Bipolar host materials, Electron Injection layer (EIL) materials, Hole Blocking layer (HBL) materials, Fluorescent host materials, TADF materials, Organic printing electronics.

Product Details


Purity Sublimed > 99% (HPLC)
Melting point 236 °C (lit.)
Appearance White crystals/powder

Chemical Structure


Chemical structure of TSPO1
Chemical structure of TSPO1

Device Structure(s)


Device structure ITO/HATCN (7nm)/TAPC (40 nm)/DCDPA (10 nm)/CzCbPy: 20 wt% DMAC-DPS (25 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (1.5 nm)/Al (100 nm) [2]
Colour Deep Blue deep blue light emitting device
Max. Luminance 8,035 cd/m2
Max. Current Efficiency 35.0 cd/A
Max. EQE 22.9%
Device structure ITO/HATCN (5 nm)/NPB (60 nm)/MCP (5 nm)/15 wt% PXZ-CMO:mCP (30 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (0.5 nm)/Al (150 nm) [3]
Colour Green green light emitting device
Max. Luminance 8,124 cd/m2
Max. Current Efficiency 38.2 cd/A
Max. EQE 12.1%
Device structure PEDOT:PSS (60 nm)/TAPC (20 nm)/mCP (10 nm)/DPEPO: TmCzTrz (25 nm)/TSPO1 (5 nm)/TPBI (20 nm)/LiF (1 nm)/Al (200 nm) [4]
Colour Blue blue light emitting device
Max. Power Efficiency 52.1 Im/W
Max. EQE 25.5%
Device structure ITO (50 nm)/PEDOT:PSS (60 nm)/poly(9-vinylcarbazole) (15 nm)/SiCz:4CzIPN (30 nm)/TSPO1 (35 nm)/LiF (1 nm)/Al (200 nm) [5]
Colour Green green light emitting device
Max. Power Efficiency 63.4 Im/W
Max. EQE 26%
Device structure ITO/MoO3 (2 nm)/TAPC (40 nm)/TCTA (10 nm)/CzSi (3 nm)/CzSi:Pd-B-1* (10%):TTPA (1%) (20 nm)/TSPO1 (10 nm)/TmPyPb (40 nm)/LiF (1.2 nm)/Al (150 nm) [6]
Colour Green green light emitting device
Max Current Efficiency 38.85 cd/A
Max EQE 10.41%
Max. Power Efficiency 38.14 lm W-1
Device structure ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2*:mCBP(20 nm)/TSPO1 (40 nm)/LiF (1 nm)/Al (100 nm) [7]
Colour Blue blue light emitting device
Max. Current Efficiency 21.1 cd/A
Max. EQE 20.2%
Max. Power Efficiency 15.1 lm W−1
Device structure ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2*:mCBP(20 nm)/TSPO1 (40 nm)/LiF (1 nm)/Al (100 nm) [8]
Colour Yellow yellow device
Max. Current Efficiency 66.2 cd/A
Max. EQE 23.2%
Max. Power Efficiency 56.2 lm W−1
Device structure ITO (120 nm)/PEDOT:PSS (60 nm)/TAPC (10 nm)/TCTA (10 nm)/mCP (10 nm)/DPEPO:DMAC-DPS:TBRb (25 nm)/TSPO1 (5 nm)/TPBI (30 nm)/LiF (1 nm)/Al (200 nm) [9]
Colour White white light emitting device
Max Current Efficiency 39.3 cd/A
Max EQE 17.6%
Max. Power Efficiency 41.0 lm W-1

*For chemical structure information, please refer to the cited references

Pricing


Grade Order Code Quantity Price
Sublimed (>99% purity) M2199A1 100 mg £260
Sublimed (>99% purity) M2199A1 250 mg £520
Sublimed (>99% purity) M2199A1 500 mg £900
Sublimed (>99% purity) M2199A1 1 g £1500

MSDS Documentation


TSPO1 MSDSTSPO1 MSDS sheet

Literature and Reviews


  1. Arylsilanes and siloxanes as optoelectronic materials for organic light-emitting diodes (OLEDs), D. Sun et al., J. Mater. Chem. C, 3, 9496 (2015); DOI: 10.1039/c5tc01638j.
  2. δ-Carboline-based bipolar host materials for deep blue thermally activated delayed fluorescence OLEDs with high efficiency and low roll-off characteristic, J. Moon et al., RSC Adv., 8, 17025 (2018); DOI: 10.1039/c8ra01761a.
  3. Suppressing Efficiency Roll-Off of TADF Based OLEDs by Constructing Emitting Layer With Dual Delayed Fluorescence, Y. Zhang et al., Front. Chem., 7, 302 (2019); doi: 10.3389/fchem.2019.00302.
Return to the top