Nitrogen-doped Graphene Oxide Powders
CAS Number 7782-42-5
2D Materials, Anode Materials, Battery Materials, Graphene Materials, Low Dimensional Materials, MaterialsPlease choose the appropriate MSDS from the list below. Links will open in a new window. If your browser does not support PDFs, you will be prompted to download the file instead.
High Quality 2D Semiconductor Material
An n-type semiconductor used in a wider variety of electronic device structures
Product Information | MSDS | Literature and Reviews | Related Products
Nitrogen-doped graphene oxide is easily dispersed within solution, which allows it to be processed in high concentrations. Unlike standard graphene oxide, the doping with nitrogen transforms the material from a p-type material to an n-type material. By transforming the material into an n-type semiconductor, graphene oxide can be used in a wider variety of electronic device structures. In addition, nitrogen-doped graphene oxide can be used as a precursor for the formation of nitrogen-doped graphene.
High Purity
>99% purity
Worldwide Shipping
Quick and reliable shipping
Low Cost
Afforable nitrogen-doped graphene oxide
Great Semiconductor
N-type semiconductor
General Information
CAS Number | 7782-42-5 (graphite) |
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Chemical Formula | CxHyNwOz |
Carbon:Nitrogen | 14.5 |
Molecular Weight | N/A |
Synonyms | N-doped graphene oxide |
Classification or Family | 2D materials, n-type semiconductor, Carbon nanomaterials, Graphene oxide, Graphene, Organic electronics |
Purity | >99%, single layer |
Colour | Black/Brown |
Nitrogen-doped Graphene Oxide Powders
Product Code | M891 |
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Flake Size | 1 – 5 μm |
Flake Thickness | 0.8 – 1.2 nm |
Purity | >99% |
Packaging Information | Light resistant bottle |
Chemical Structure
MSDS Documents
Nitrogen-doped graphene oxide powder
Pricing Table
Product Code | Form | Flake Size | Weight/Volume | Pricing |
---|---|---|---|---|
M891 | Powder | 1 - 5 μm | 200 mg | £190 |
M891 | Powder | 1 - 5 μm | 500 mg | £400 |
More on Nirogen-doped Graphene Oxide
N-doped graphene oxide (NGO), CAS number 7782-42-5, overcomes the disadvantages of graphene oxide (GO) by adding nitrogen doping into the process of GO synthesis to repair defects and improve the electronic structure of GO.
Literature and Reviews
- High-Performance Perovskite Solar Cells Engineered by an Ammonia Modified Graphene Oxide Interfacial Layer, S Feng et al., ACS Appl. Mater. Interfaces, Article ASAP (2016), DOI: 10.1021/acsami.6b02064.
- The Two-Dimensional Nanocomposite of Molybdenum Disulfide and Nitrogen-Doped Graphene Oxide for Efficient Counter Electrode of Dye-Sensitized Solar Cells, C-K. Cheng et al., Nanoscale Res. Lett., 11:117 (2016); DOI 10.1186/s11671-016-1277-0.
- Nitrogen-doped reduced graphene oxide electrodes for electrochemical supercapacitors, H. Nolan et al., Phys.Chem.Chem.Phys., 16, 2280 (2014); DOI: 10.1039/c3cp54877e.
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