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Product Code M891-200mg
Price $247 ex. VAT

High Quality 2D Semiconductor Material

An n-type semiconductor used in a wider variety of electronic device structures


Product Information | MSDS | Literature and Reviews | Related Products


Nitrogen-doped graphene oxide is easily dispersed within solution, which allows it to be processed in high concentrations. Unlike standard graphene oxide, the doping with nitrogen transforms the material from a p-type material to an n-type material. By transforming the material into an n-type semiconductor, graphene oxide can be used in a wider variety of electronic device structures. In addition, nitrogen-doped graphene oxide can be used as a precursor for the formation of nitrogen-doped graphene.

High purity nitrogen-doped graphene oxide powders

High Purity

>99% purity

Worldwide shipping for 7782-42-5

Worldwide Shipping

Quick and reliable shipping

Low cost 7782-42-5

Low Cost

Afforable nitrogen-doped graphene oxide

N-type semiconductor

Great Semiconductor

N-type semiconductor

General Information


CAS Number 7782-42-5 (graphite)
Chemical Formula CxHyNwOz
Carbon:Nitrogen 14.5
Molecular Weight N/A
Synonyms N-doped graphene oxide
Classification or Family 2D materials, n-type semiconductor, Carbon nanomaterials, Graphene oxide, Graphene, Organic electronics
Purity >99%, single layer
Colour Black/Brown

Nitrogen-doped Graphene Oxide Powders


Product Code M891
Flake Size 1 – 5 μm
Flake Thickness 0.8 – 1.2 nm
Purity >99%
Packaging Information Light resistant bottle

Chemical Structure


chemical structure of n-doped graphene oxide
Chemical structure of nitrogen-doped monolayer graphene oxide

MSDS Documents


Nitrogen-Doped Graphene Oxide Powder MSDSNitrogen-doped graphene oxide powder

Pricing Table


Product Code Form Flake Size Weight/Volume Pricing
M891 Powder 1 - 5 μm 200 mg £190
M891 Powder 1 - 5 μm 500 mg £400

More on Nirogen-doped Graphene Oxide


N-doped graphene oxide (NGO), CAS number 7782-42-5, overcomes the disadvantages of graphene oxide (GO) by adding nitrogen doping into the process of GO synthesis to repair defects and improve the electronic structure of GO.

Literature and Reviews


  1. High-Performance Perovskite Solar Cells Engineered by an Ammonia Modified Graphene Oxide Interfacial Layer, S Feng et al., ACS Appl. Mater. Interfaces, Article ASAP (2016), DOI: 10.1021/acsami.6b02064.
  2. The Two-Dimensional Nanocomposite of Molybdenum Disulfide and Nitrogen-Doped Graphene Oxide for Efficient Counter Electrode of Dye-Sensitized Solar Cells, C-K. Cheng et al., Nanoscale Res. Lett., 11:117 (2016); DOI 10.1186/s11671-016-1277-0.
  3. Nitrogen-doped reduced graphene oxide electrodes for electrochemical supercapacitors, H. Nolan et al., Phys.Chem.Chem.Phys., 16, 2280 (2014); DOI: 10.1039/c3cp54877e.

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