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Product Code M2113A10
Price $676 ex. VAT

Tin(II) sulfide crystal, high purity semiconducting material

For applications in next generation photovoltaic solar cells


Technical Data | MSDS | Structure | Literature and Reviews | Related Products | Resources and Support


Tin(II) sulfide (SnS), CAS number 1314-95-0, with a direct energy band-gap of about 1.3 eV, and a high optical absorption coefficient over 5 × 104 cm-1, is a promising new candidate for applications in the next generation of photovoltaic solar cells. Made of earth-abundant, relatively cheap and environmentally-nontoxic elements, SnS is solution processable and stable in both alkaline and acidic conditions.

Like the other family members of layered group IV monochalcogenides (including SnSe, GeS, and GeSe), 2D layered SnS has puckered structures - similar to those of black phosphorus. SnS crystallises in the form of an orthorhombic structure, where each Sn(II) atom is coordinated to six S atoms - with three short Sn–S bonds within the surface and three longer Sn-S bonds connecting outer surface of the same layer.

As an analogue to phosphorene, 2D SnS has also been predicted to have strong in-plane anisotropy. However, with two elements of different electronegativity (compared to phosphorene with its single element), the symmetry of SnS structure is rendered, leading to even richer physical properties.

High Purity 1314-95-0

High Purity

≥99.999% Crystal Purity

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1314-95-0 2D semiconductor

Semiconductor

2D semiconductor

Applications of Tin(II) Sulfide (SnS)

Applications

Applications in next generation photovoltaic solar cells

Technical Data

CAS Number 1314-95-0
Chemical Formula SnS
Molecular Weight 150.78 g/mol
Bandgap 1.07 - 1.32 eV [1]
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Orthorhombic
Electronic Properties 2D semiconductor
Melting Point 882 °C (lit.)
Colour Brown/Yellow
Synonyms Tin sulfide, Stannous sulfide, Tin monosulfide, Tin sulphide, Herzenbergite
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Form Purity
Crystal ≥99.999%

Pricing Table

Product Code Form Size* Quantity (EA) Price
M2113A10 Crystal Small (≥10 mm2) 1 £520
M2113A25 Crystal Medium (≥25 mm2) 1 £850

*Typical representative size, areas/dimensions may vary

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MSDS Documents


Tin(II) Sulfide Crystal MSDSTin(II) sulfide crystal

Structure of Tin(II) Sulfide Crystal


SnS structure
The puckered structure of Tin(II) sulfide (SnS)

Literature and Reviews


  • Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS, J. Vidal et al., Appl. Phys. Lett. 100, 032104 (2012); DIO: 10.1063/1.3675880.
  • Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd−Even Quantum Confinement Effect, and High Carrier Mobility, C. Xin et al., J. Phys. Chem. C, 120, 22663−22669 (2016); DOI: 10.1021/acs.jpcc.6b06673.
  • Growth of Large-Size SnS Thin Crystals Driven by Oriented Attachment and Applications to Gas Sensors and Photodetectors, J. Wang et al., ACS Appl. Mater. Interfaces, 8, 9545−9551 (2016); DOI: 10.1021/acsami.6b01485.


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Resources and Support


Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

Learn more...
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