F4TCNQ

F4TCNQ, most effective p-type dopant with a deep LUMO level

High-purity (>99.0%) and available online for priority dispatch

Overview | Specifications |Pricing and Options | Literature and Reviews

F4TCNQ, CAS number 29261-33-4, is one of the most widely used and most effective p-type dopants due to its strong electron-accepting ability and the extended π system. It has a deep LUMO level (-5.2 eV) which is energetically in the vicinity of the HOMO level of many organic semiconductors. Doping is facilitated by charge transfer from the HOMO level of the host to the LUMO of the dopant molecule. Pin devices with F4TCNQ doped 4,4',4''-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) serving as the p-doped HTL show high luminance and efficiency at extremely low operating voltages: For instance, a luminance of 1000 cd/m² is reached at a voltage of 2.9 V [1].

F4TCNQ from Ossila was used in the high-impact paper (IF 18.81), High Seebeck Coefficient in Mixtures of Conjugated Polymers, G. Zuo et al., Adv. Funct. Mater., 1703280 (2017); DOI: 10.1002/adfm.201703280.

It has been reported that by controlling the doping concentration, the PCE of the PCDTBT:F4TCNQ solar cells increased from 6.41% to 7.94%, mainly due to improving the photocurrent with a F4TCNQ weight ratio of the blend lower than 0.5% [2]. F4TCNQ is also used as the p-type dopant for graphenes [3,4].

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.

Device structure	ITO/m-MTDATA*:F4-TCNQ (100 nm)/TPD (5 nm)/Alq3 (20 nm) /BPhen (10 nm)/ Bphen:Li (30 nm)/LiF (1 nm)/Al (100 nm) [1]
Colour	Green
Luminance	1,000 cd/m2 at 2.9 V (high brightness at low operating voltage)
Max. Current Efficiency	5.27 cd/A

Device structure	ITO/MeO-TPD*:F4-TCNQ (100 nm)/Spiro-TAD (10 nm)/TCTA:Ir(ppy)3 (5 nm)/BPhen (10 nm)/Cs-doped BPhen (50 nm)/Al [5]
Colour	Green
Max. EQE	13.7%
Max. Power Efficiency	52 lm W−1

Device structure	ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [6]
Colour	Green
Luminance@15 V	1,320 cd/m2
Power Efficiency@14 V	56.6 lm W−1
Current Efficiency@14 V	23.17 cd/A

Device structure	ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [7]
Colour	Red
Luminance@ 10 mA/cm2	1,790 cd/m2
Power Efficiency@ 10 mA/cm2	4.65 lm W−1
Current Efficiency@ 10 mA/cm2	18.0 cd/A

Device structure	ITO/MeO-TPD: F4-TCNQ (100 nm, 4%)/NPB (15 nm)/CBP: (MPPZ)2Ir(acac) (25 nm, 8.5%)/CBP (4 nm)/CBP: DSA-ph (20 nm, 3%)/ETLs (30 nm)/LiF (1 nm)/Al (200 nm) [8]
Colour	White
Max. Luminance	97,067 cd/m2
Max. Current Efficiency	42.8 cd/A
Max. Power Efficiency	21.1 lm W−1

Device structure	ITO (120 nm)/0.4 wt. % F4-TCNQ:α-NPD (35 nm)/5 wt. % BCzVBi:CBP (20 nm)/ 5 wt. % Ir(ppy)3:CBP (4 nm)/0.75 wt. % Ir(btp)2acac:CBP (12.5 nm)/BAlq (30 nm)/LiF (1 nm)/Al (150 nm) [9]
Colour	White
Max. Luminance	106,100 cd/m2
Max. Current Efficiency	50.3 cd/A
Max. Power Efficiency	26.3 lm W−1

*For chemical structure information, please refer to the cited references.

Characterisation

Pricing

Literature and Reviews

1. Low-voltage organic electroluminescent devices using pin structures, J. Huang et al., Appl. Phys. Lett. 80, 139 (2002); https://dx.doi.org/10.1063/1.1432110.
2. Molecular Doping Enhances Photoconductivity in Polymer Bulk Heterojunction Solar Cells, Y. Zhang et al., Adv. Mater., 25, 7038–7044 (2013).
3. Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field, X. Tian et al., J. Phys. Chem. B, 114 (35), 11377–11381 (2010).

View Literature and Reviews