Hexagonal Boron Nitride (h-BN) Crystals

CAS Number 10043-11-5

2D Materials, Hexagonal Boron Nitride, Low Dimensional Materials, Materials

Hexagonal Boron Nitride (h-BN) Crystals CAS 10043-11-5

Low price, high purity 2D hexagonal boron nitride (h-BN) crystals

Suitable for the creation of single or few-layer sheets via mechanical or liquid exfoliation

Product Information | MSDS | Literature and Reviews

Hexagonal boron nitride (h-BN) (CAS number 10043-11-5) has a honeycomb structure based on sp² covalent bonds similar to graphene. Due to the similarity it is also known as “white graphene”. Unlike graphene, h-BN exhibits a wide band gap due to the difference in electronegativities of boron and nitrogen.

High Purity

High purity ≥99.99% Hexagonal Boron Nitride Crystal

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Low price Hexagonal Boron Nitride (h-BN)

Film & Crystals

Available in Film and crystal forms

h-BN is normally considered an insulator, and is used as a sub-layer material for any other 2D material in electronic devices. However, it has exotic opto-electronic properties (e.g. wide bandgap and low dielectric constant) along with mechanical robustness, high thermal conductivity and chemical inertness. It was later confirmed to have an indirect bandgap (at 5.955 eV), and thus is also considered a semiconductor.

2D h-BN has no absorption in the visible range, but has absorption in the ultraviolet region with good photoluminescence.

h-BN is widely used as a dielectric substrate in electronic and optical devices for graphene and other 2D-layered semiconductors (e.g. transition metal dichalcogenides TMDs).

Hexagonal boron nitride (h-BN) crystals are most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation.

h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.

Technical Data

CAS Number	‎10043-11-5
Full Name	Hexagonal boron nitride
Chemical Formula	BN
Molecular Weight	24.82 g/mol
Bandgap	Indirect bandgap at 5.955 eV
Purity	≥99.99%
Preparation	Synthetic - Chemical Vapour Transport (CVT)
Structure	Hexagonal (2H)
Electronic Properties	2D Materials - insulator/semiconductor
Melting Point	‎‎2,973 °C (sublimates)
Colour	Colourless
Synonyms	White graphene, hexagonal BN, h-BN
Classification / Family	2D materials, Organic electronics, Materials science

Pricing Table

Product Code	Form	Package/Substrates*	Price
M2133A1	Crystals	Pack of 5 Crystals	£520
M2133C1	Crystals	Pack of 10 Crystals	£900

*typical representative size, areas/dimensions may vary

**item with a lead time of 4 - 6 weeks, please contact for more information

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MSDS Documents

Hexagonal boron nitride Crystals MSDS

Literature and Reviews

Hexagonal boron nitride is an indirect bandgap semiconductor, G. Cassabois et al., Nat. Photon., 10, 262–266 (2016);DOI: 10.1038/NPHOTON.2015.277.
Graphene, hexagonal boron nitride, and their heterostructures: properties and applications, J. Wang et al., RSC Adv., 7, 16801 (2017); DOI: 10.1039/c7ra00260b.
Two dimensional hexagonal boron nitride (2D-h-BN): synthesis, properties and applications, K. Zhang et al., J. Mater. Chem. C, 5, 11992 (2017); DOI: 10.1039/c7tc04300g.

Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing, J. Bao et al., Electron. Mater. Lett., 12, 1-16 (2016), DOI: 10.1007/s13391-015-5308-2.
Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications, Q. Weng et al., Chem. Soc. Rev., 45, 3989-4012 (2016); DOI:10.1039/C5CS00869G.
Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al., Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606 .
Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets, G. Bhimanapati et al., anoscale, 6, 11671-11675 (2014); DIO: 10.1039/C4NR01816H.
Large Scale Thermal Exfoliation and Functionalization of Boron Nitride, Z. Cui et al., small, 10 (12), 2352–2355 (2014); DOI: 10.1002/smll.201303236.
White Graphene undergoes Peroxidase Degradation, R. Kurapati et al., Angew.Chem., 128,5596 –5601 (2016); DOI:10.1002/anie.201601238.
Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets, J. Wang et al., Nanoscale, 7, 1718-1724 (2015); DOI: 10.1039/C4NR04445B.
Monolayer to Bulk Properties of Hexagonal Boron Nitride, D. Wickramaratne et al., J. Phys. Chem. C, 122 (44), 25524–25529 (2018); DOI: 10.1021/acs.jpcc.8b09087.
Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al, Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606.
Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride, K. Ba et al., Sci. Rep., 7, 45584 (2017); DOI: 10.1038/srep45584.
Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains, Q. Wu et al., Sci. Rep., 5, 16159 (2015); DOI: 10.1038/srep16159,
Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition, R. Chang et al., Chem. Mater. 2017, 29, 6252−6260 (2017); DOI: 10.1021/acs.chemmater.7b01285.
Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films, P Sutter et al., Nano Lett. 2013, 13, 276−281 (2013); DIO: 10.1021/nl304080y.
High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride, H, Liu et al., Nanoscale, 10, 5559–5565 (2018); DOI: 10.1039/c7nr09438h .
Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal−Organic Chemical Vapor Deposition, D. Kim et al., Cryst. Growth Des., 17, 2569−2575 (2017); DOI: 10.1021/acs.cgd.7b00107.
Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets, J. Nanomater., 30429 (2015); doi: 10.1155/2015/304295.
Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition, J. Liu et al., Molecules, 21, 1636 (2016); doi:10.3390/molecules21121636.
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy, APL Mater. 2, 092502 (2014); doi.org/10.1063/1.4889815.
Vacuum-Ultraviolet Photodetection in Few-Layered h‑BN, W. Zheng et al., ACS Appl. Mater. Interfaces, 10, 27116−27123 (2018); DOI: 10.1021/acsami.8b07189.

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