Indium Oxide Powder

CAS Number 1312-43-2

Battery Materials, Inorganic Electronic Materials, Metal Oxides, Semiconducting Molecules

A semiconducting metal oxide with high transparency

used in FETs, solar cells, batteries and electrochemistry, In₂O₃

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Indium oxide (CAS number 1312-43-2), is a semiconducting metal oxide with a bandgap of around 3 eV. Indium oxide can be doped by various metals to afford transparent conducting oxide such as ITO. Indium oxide offers high electron mobility up to 100 cm²/V·s, making it an ideal material for high performance field effect transistors (FETs). Due to its wide bandgap, indium oxide has high optical transparency (transmittance of 70–80%) with refractive index of 2.0.

Indium oxide is also used as an interconnect layer for tandem solar cells. Compared to Ag or Au, indium oxide does not introduce notable optical losses as an interconnect layer in tandem solar cells. This boosts the external quantum efficiency (EQE) of the organic back-cell, leading to an improved overall short-circuit current (J_sc) by approximately 1.5 mA/cm².

In lithium batteries, indium oxide suppresses the growth of lithium dendrites on the anode, improving cyclic stability (with a capacity retention above 80% after 600 cycles).

A wide bandgap metal oxide

high optical transparency

High electron mobility

applied in FETs, batteries, and solar cells

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High Purity

99.99%

General Information

CAS Number	1312-43-2
Chemical Formula	In₂O₃
Full Name	Diindium trioxide
Molecular Weight	277.64 g/mol
Melting Point	1910 °C
Synonyms	Indium sesquioxide, Indium (III) oxide
Classification or Family	Metal oxide, Semiconducting materials, FETs, Solar cells, batteries, Electrochemistry

Product Details

Purity	99.99%
Particles Size	ca. 50 nm
Appearance	Pale yellow powder

MSDS Documentation

Indium Oxide Powder MSDS Sheet

References

Review—extremely thin amorphous indium oxide transistors, A. Charnas et al., Adv. Mater., 36, 2304044 (2024); DOI: 10.1002/adma.202304044.
Perovskite–organic tandem solar cells with indium oxide interconnect, K. Brinkmann et al., Nature, 604, 280–286 (2022); DOI: 10.1038/s41586-022-04455-0.
Improving the thermal stability of indium oxide n-type field-effect transistors by enhancing crystallinity through ultrahigh-temperature rapid thermal annealing, C. -S. Huang et al., ACS Appl. Mater. Interfaces, 17, 5078–5085 (2025), DOI: 10.1021/acsami.4c18435.

Highly dispersed indium oxide nanoparticles supported on carbon nanorods, enabling efficient electrochemical CO₂ reduction, B. Pan et al., Small Sci., 1, 2100029 (2021); DOI: 10.1002/smsc.202100029.
Two birds with one stone: using indium oxide surficial modification on tune inner Helmholtz plane and regulate nucleation for dendrite-free lithium anode, Y. Chen et al., Small Methods, 6 (5), 2200113 (2022); DOI: 10.1002/smtd.202200113.
Wide-gap chalcopyrite solar cells with indium oxide-based transparent back contacts, J. Keller et. al., Sol. RRL, 6, 2200401 (2022); DOI: 10.1002/solr.202200401.

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