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Product Code M671-250mg
Price $624 ex. VAT

Ir(piq)2(acac), efficient phosphorescent red emitter dopant material in PhOLED devices

High-purity (>99.0%) and available online for priority dispatch


Bis(1-phenylisoquinoline)(acetylacetonate)iridium(III), Ir(piq)2(acac), is widely used as an efficient phosphorescent red emitter dopant material in PhOLED devices. It was reported that the piq ligand can partially suppress the triplet-triplet annihilation and show short phosphorescent lifetime [2].

General Information


CAS number 435294-03-4
Chemical formula C35H27IrN2O2
Molecular weight 699.82 g/mol
Absorption λmax 302 nm in THF
Phosphorescence λem 633 nm in THF
HOMO/LUMO HOMO = 5.0 eV, LUMO = 3.0 eV [1]
Synonyms
  • (piq)2Ir(acac)
  • Bis(1-phenylisoquinoline)(acetylacetonate)iridium(III)
Classification / Family Organometallic complex, Phosphorescent red emitter, Red dopant, OLED and PLED materials, Sublimed materials

Product Details


Purity

>99.5% (sublimed)

>99.0% (unsublimed)

Melting point 366-370 °C (lit.)
Appearance Red powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure


Chemical structure of tiopc ir(piq)2(acac)
Chemical Structure of Bis(1-phenylisoquinoline)(acetylacetonate)iridium(III), Ir(piq)

Device Structure(s)


Device structure ITO/m-MTDATA (30 nm)/NPB (20 nm)/TPBI:4 wt% Ir(ppy)3:2 wt% Ir(piq)2(acac) (30 nm)/ Alq3(20 nm)/LiF/Al [3]
Colour White white light emitting device
Max. Luminance 33,012 cd/m2
Current Efficiency@100 cd/m2 15.3 cd/A
Max. Powder Efficiency 10.7 lm W−1
Device structure ITO/DNTPD* (60 nm)/NPB (20 nm)/mCP (10 nm)/mCP:FIrpic (25 nm)/CBP:Ir(piq)2acac (5 nm)/BCP (5 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm) [4]
Colour White white light emitting device
EQE@500 cd/m2 8.2 %
Current Efficiency@500 cd/m2 12.7 lm W−1
Device structure ITO/NPB (20 nm)/TCTA (10 nm)/BIQS*:(piq)2Ir(acac) ( 4 wt%, 30 nm)/BCP (15 nm)/Alq3 (50 nm)/LiF (1 nm)/Al (100 nm) [6]
Colour Red red light emitting device
Max. Luminance 60,138 cd/m2
Max. EQE 23.7
Max. Current Efficiency 28.6 cd/A
Max. Power Efficiency 24.2 lm W−1
Device structure ITO/NPB/anthracene/TPBI:11% Irppy3:0.5% Ir(piq)2(acac)/Mg:Ag [7]
Colour White white light emitting device
Max. Luminance 6,398 cd/m2
Max. Current Efficiency 6.4 cd/A
Device structure ITO/MoO3(1nm)/CBP(20nm)/CBP:Ir(piq)2(acac) (3 wt.%,4 nm)/CBP: Ir(DMP)3(5 wt.%,4 nm)/CBP:Ir(ppy)2(acac)(7 wt.%,5 nm)/CBP(3 nm)/Bepp2:BCzVBi(50wt.%,40nm)/Bepp2(20nm)/LiF(1nm)/Al(100nm) [8]
Colour White white light emitting device
Max. Current Efficiency 26.4 cd/A
Max. Power Efficiency 24.8 lm W−1
Device structure ITO/NPB/CBP:3 wt%TBPe:1 wt%rubrene/Zn(BTZ)2:5 wt% Ir(piq)2(acac)/Zn(BTZ)2/Mg:Ag [9]
Colour White white light emitting device
Max. EQE 2.4%
Max. Luminance 23,000 cd/m2

*For chemical structure information please refer to the cited references.

Characterisation


1H NMR Ir(piq)2(acac)
1H NMR of bis(1-phenylisoquinoline)(acetylacetonate)iridium, Ir(piq)2(acac) in in CDCl3
HPLC Ir(piq)2(acac)
HPLC trace of Bis(1-phenylisoquinoline)(acetylacetonate)iridium(III), (piq)2Ir(acac)

Pricing


Grade Order Code Quantity Price
Unsublimed (>99.0% purity) M672 250 mg £260
Unsublimed (>99.0% purity) M672 500 mg £460
Unsublimed (>99.0% purity) M672 1 g £800
Sublimed (>99.5% purity) M671 250 mg £480
Sublimed (>99.5% purity) M671 500 mg £900
Sublimed (>99.5% purity) M671 1 g £1450

MSDS Documentation


Ir(piq)2(acac) MSDSIr(piq)2(acac) MSDS sheet

Literature and Reviews


  1. Multilayer organic electrophosphorescent white light-emitting diodes without exciton-blocking layer,
    G. Lei et al., Appl. Phys. Lett. 88, 103508 (2006); http://dx.doi.org/10.1063/1.2185255.
  2. Yellow and Red Electrophosphors Based on Linkage Isomers of Phenylisoquinolinyliridium Complexes: Distinct Differences in Photophysical and Electroluminescence Properties, C-L. Li et al., Adv. Funct. Mater. 15, 387-395 (2005); DOI: 10.1002/adfm.200305100.
  3. High-efficiency electrophosphorescent white organic light-emitting devices with a double-doped emissive layer, W. Xie et al., Semicond. Sci. Technol. 20, 326–329 (2005); doi:10.1088/0268-1242/20/3/013.
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