Ir(piq)3

Ir(piq)3, a deep red phosphorescent dopant material for OLED devices

High purity and available online for priority dispatch

Tris(1-phenylisoquinoline)iridium(III), Ir(piq)₃ is a deep red phosphorescent dopant material.

Due to their high electron affinities, quinoline/isoquinoline-based compounds have received considerable attention in optoelectronic materials. With greater π-electronic conjugation in the isoquinoline ring, the energy of the lowest unoccupied molecular orbital (LUMO) is significantly lowered, and the energy gap is reduced.

Ir(piq)₃, together with Ir(piq)₂acac, are the ones that have been most studied in theisoquinoline iridium complex family. The 'piq' unit of the ligand part can partially suppress the triplet-triplet annihilation and show short phosphorescent lifetimes.

General Information

* Measurable with an USB spectrometer, see our spectrometer application notes.

Product Details

* Sublimation is a technique used to obtain ultra pure-grade chemicals, see sublimed materials.

Chemical Structure

Device Structure(s)

Device structure	ITO/NPD* (40 nm)/9%-Ir(piq)3:CBP (20 nm)/BPhen (50 nm)/KF (1 nm)/Al [2]
Colour	Red
Max. Luminance	11,000 cd/m2
Max EQE	10.3%
Max. Power Efficiency	8.0 lm W−1

Device structure	ITO/PEDOT:PSS/BlueJ*:PVK:Ir(pbpp)3*:Ir(piq)3/BCP/Li:Al [3]
Colour	White
Max. Luminance	905 cd/m2
Max EQE	3.2%
Max. Current Efficiency	12.52 cd/A

Device structure	ITO/NPB (40 nm)/Bebq2:1 wt% Ir(piq)3 (30 nm)/Bebq2 (20 nm)/LiF (0.5 nm)/Al (100 nm)[6]
Colour	Red
Max. Current Efficiency	12.71 cd/A
Max. Power Efficiency	16.02 lm W−1

Device structure	ITO/TAPC (40 nm)/TCTA:Ir(piq)3 2 wt % (1 nm)/TCTA 46 wt %:BP4mPy 46 wt %: FIrpic 8 wt % (28 nm)/BP4mPy:Ir(piq)3 3 wt % (1 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [7]
Colour	White
Max. Luminance	19,007 cd/m2
Max EQE	11.3%
Max. Current Efficiency	15.6 cd/A
Max. Power Efficiency	16.3 lm W−1

Device structure	ITO/TAPC (40 nm)/ TCTA 46 wt %:BP4mPy 46 wt %:Ir(piq)3 8 wt % (30 nm)/ BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [7]
Colour	Red
Max. Luminance	14,879 cd/m2
Max EQE	8.8%
Max. Current Efficiency	5.6 cd/A
Max. Power Efficiency	5.4 lm W−1

Device structure	ITO/MeO-TPD: F4-TCNQ (100 nm, 4 %)/NPB (15 nm)/TCTA (5 nm)/TCTA: Ir (ppy)3 : Ir(piq)3 (25 nm, 1:9:0.8 %)/MADN: DSA-ph (20 nm, 1 %)/Bepp2 (250 nm)/LiF (1 nm)/Al (200 nm) [8]
Colour	White
Max. Current Efficiency	8.4 cd/A
Max. Power Efficiency	13.1 lm W−1
Max. CRI	90

Device structure	ITO(150 nm)/NPB(70 nm)/mCP:Firpic-8.0%:Ir(ppy)3-0.5%:Ir(piq)3-0.5%(30 nm)/TPBi(30 nm)/Liq(2 nm)/Al(120 nm) [9]
Colour	White
Max. Luminance	37,810 cd/m2
Current Efficiency@1000 cd/m2	48.10 cd/A

Device structure	ITO/PEDOT:PSS (40 nm)/NPB (15 nm)/ TCTA: 4 wt.% Ir(piq)3 (3.5 nm)/TCTA: 4 wt.% Ir(bt)2(acac) (4 nm)/TCTA: 25 wt.% TmPyPb*: 2 wt. % 4P-NPD* (7 nm)/TmPyPb (4 nm)/TmPyPb: 5 wt.% Ir(ppy)2(acac) (3 nm)/TmPyPb (15 nm)/TmPyPb: 4 wt.% Cs2CO3 (35 nm)/ Cs2CO3/Al [10]
Colour	White
EQE@1000 cd/m2	14.2%
Current Efficiency@1000 cd/m2	26 cd/A
Power Efficiency@1000 cd/m2	21.9 lm W−1

*For chemical structure information, please refer to the cited references.

Characterisation

Pricing

MSDS Documentation

Ir(piq)3 MSDS sheet

Literature and Reviews

1. Efficient simple structure red phosphorescent organic light emitting devices with narrow band-gap fluorescent host, T. J. Park et al., Appl. Phys. Lett., 92, 113308 (2008); doi: 10.1063/1.2896641.
2. Homoleptic Cyclometalated Iridium Complexes with Highly Efficient Red Phosphorescence and Application to Organic Light-Emitting Diode, A. Tsuboyama et al., J. Am. Chem. Soc., 125, 12971-12979 (2003). DOI: 10.1021/ja034732d.
3. White-Light-Emitting Diodes Based on Iridium Complexes via Efficient Energy Transfer from a Conjugated Polymer, T-H. Kim et al., Adv. Funct. Mater., 16, 611–617 (2006). DOI: 10.1002/adfm.200500621.