Molybdenum Diselenide Few-Layer Film
CAS Number 12058-18-3
2D Materials, Low Dimensional Materials, Materials, Molybdenum Diselenide (MoSe2), Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)
MoSe2 Few-Layer Film, with high electrical conductivity
Great potential for energy processing and storage devices
Technical Data | MSDS | Applications | Literature and Reviews | Related Products | Resources and Support
Molybdenum diselenide (MoSe2) few-layer films, CAS number 12058-18-3, have electrical and optical properties that are dependent on the number of layers a film has. Few-layer MoSe2 nanosheets have a high surface area and unique electronic (quasiparticle bandgap) properties due to interlayer coupling and screening effects. The band gap varies from 1.50 eV (in a monolayer) to 1.1 eV (in a bulk counterpart).
High Purity
High purity >99% Molybdenum Diselenide Film
Worldwide shipping
Quick and reliable shipping
Low Cost
Low Cost Molybdenum Diselenide
High electrical conductivity
Unique electronics (quasiparticle bandgap)
Technical Data
| CAS Number | 12058-18-3 |
| Chemical Formula | MoSe2 |
| Molecular Weight | 253.86 g/mol |
| Bandgap | 1.41 - 1.58 eV |
| Colour | Black/Dark brown |
| Synonyms | Molybdenum(IV) selenide, Molybdenum selenide |
| Classification / Family | Transition metal dichalcogenides (TMDCs), 2D semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical energy storage system, Materials science |
Product Details
| Substrate | SiO2/Si |
| Product Code | M2170F11 |
| Size | 1 cm x 1 cm* |
| Growth Method | CVD synthesis |
| Appearance | Transparent |
| Purity | >99% |
| Transparency | >97% |
| Coverage | >95% |
| Number of Layers | 2 - 5 |
| Sheet Resistance | N/A |
| Transfer method | Directly grown |
| Substrate Thickness | 300 nm (oxide layer) |
*Other sizes available: up to 2 cm × 2 cm.
High-quality molybdenum diselenide (MoSe2) few-layer films are available on SiO2/Si as standard. Different substrates of few-layer MoSe2 films, including Sapphire, Glass, Silicon and Quartz are also available via custom order.
Please contact us for more information regarding custom products.
Pricing Table
| Product Code | Substrate | Size | Quantity (EA) | Price |
|---|---|---|---|---|
| M2170F11 | SiO2/Si | 1 cm × 1 cm | 1 | £640 |
MSDS Document
Molybdenum diselenide few-layer film
Applications
Molybdenum diselenide few-layer films show great potential in energy processing and storage devices (such as lithium and sodium ion batteries) due to their large interlayer spacing (0.64 nm) and higher electrical conductivity.
It has also been widely used in lasers, capacitors, photodetectors, and photoelectrochemical cells as catalysts for hydrogen evolution reactions (HERs).
Synthesis
High-quality molybdenum diselenide few-layer films are directly grown on substrates (SiO2/Si) via the chemical vapour deposition (CVD) method.
Usage
MoSe2 few-layer films can be used for research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. These films can also be transferred to other substrates.
Literature and Reviews
- Characterization of few-layer 1T-MoSe2 and its superior performance in the visible-light induced hydrogen evolution reaction, U. Gupta, et al., APL Mater. 2, 092802 (2014); DIO: 10.1063/1.4892976.
- Few-layered MoSe2 nanosheets as an advanced electrode material for supercapacitors, S. Balasingam etal., Dalton Trans., 44, 15491 (2015); DOI: 10.1039/c5dt01985k.
- Layer-controlled synthesis of wafer-scale MoSe2 nanosheets for photodetector arrays, T. Dai et al., J. Mater. Sci., 53, 8436–8444 (2018); DIO: 10.1007/s10853-018-2142-6.
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