Molybdenum Diselenide Monolayer Film
CAS Number 12058-18-3
2D Materials, Low Dimensional Materials, Materials, Molybdenum Diselenide (MoSe2), Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)
High quality and high purity MoSe2 Monolayer Film
For applications in tunnel FETs and optoelectronic devices
Technical Data | MSDS | Applications | Literature and Reviews | Related Products | Resources and Support
Monolayer molybdenum diselenide (MoSe2) film (CAS number 12058-18-3) has a direct bandgap of about 1.5 eV, making it one of the most desirable 2D-layered structures in photovoltaic single-junction solar cells and photoelectrochemical cells. Monolayer MoSe2 film consists of two layers of Se atoms, with one layer of Mo atoms sandwiched in the middle (Se-Mo-Se).
High Purity
High purity >99% Molybdenum Diselenide Film
Worldwide shipping
Quick and reliable shipping
Low Cost
Low Cost Molybdenum Diselenide
Versatile
Applications in tunnel FETs and optoelectronic devices
Technical Data
| CAS Number | 12058-18-3 |
| Chemical Formula | MoSe2 |
| Molecular Weight | 253.86 g/mol |
| Bandgap | 1.41 - 1.58 eV |
| Colour | Black/Dark brown |
| Synonyms | Molybdenum(IV) selenide, Molybdenum selenide |
| Classification / Family | Transition metal dichalcogenides (TMDCs), 2D semiconductor Materials, Nano-electronics, Nano-photonics, Electrochemical energy storage system, Materials science |
Product Details
| Substrate | SiO2/Si |
| Product Code | M2169F11 |
| Size | 1 cm × 1 cm* |
| Growth Method | CVD synthesis |
| Appearance | Transparent |
| Purity | >99% |
| Transparency | >97% |
| Coverage | >95% |
| Number of Layers | 1 |
| Sheet Resistance | N/A |
| Transfer Method | Directly grown |
| Substrate Thickness | 300 nm (oxide layer) |
*Other sizes available: up to 2 cm × 2 cm.
High-quality molybdenum diselenide (MoSe2) monolayer films are available on SiO2/Si as standard. Different substrates of monolayer MoSe2 films, including Sapphire, Glass, Silicon and Quartz are also available via custom order.
Discontinuous isolated triangular crystals (crystal islands) films are also available via custom request. Please contact us for more information regarding custom products.
Pricing Table
| Substrate | Product Code | Size | Quantity (EA) | Price |
|---|---|---|---|---|
| SiO2/Si | M2169F11 | 1 cm × 1 cm | 1 | £640 |
MSDS Document
Molybdenum diselenide monolayer film
Applications
Having a direct optical band gap of 1.48 eV with a photoluminescence peak at 840 nm, molybdenum diselenide monolayer film is ideal for applications in optoelectronics.
Also, with with its narrower bandgap, higher optical absorbance and larger spin-splitting energy than MoS2, MoSe2 ultrathin films are potentially better than MoS2 for the applications in tunnel FETs and optoelectronic devices.
Synthesis
High-quality molybdenum diselenide monolayer film was grown directly on the substrates (SiO2/Si) by the chemical vapour deposition (CVD) method.
Usage
MoSe2 monolayer film can be used for research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. Monolayer MoSe2 film can also be transferred to other substrates.
Literature and Reviews
- CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors, J. Xia et al., Nanoscale, 6, 8949 (2014); DOI: 10.1039/c4nr02311k.
- Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition, Y. Zhao et al., RSC Adv., 7, 27969 (2017); DOI: 10.1039/c7ra03642f.
- Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates, X. Lu et al., Nano Lett. 2014, 14, 2419−2425 (2014); DIO: 10.1021/nl5000906.
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