Evaporation Stack for OFETs, High Density
High Density Evaporation Stack for OFETs
Enabling accurate deposition resolution
Overview | Specifications | Resources
The evaporation stack holds the source-drain shadow masks (sold separately) and substrates in close contact for thermal evaporation. This is crucial for device fabrication because the source-drain channel is the most critical feature on an OFET. For use with the Ossila high-density OFET source-drain evaporation masks and Silicon Oxide Substrates.
Specifications
The key component is the lower support, which is milled from a solid block of aluminum to provide high-precision recesses for individual shadow masks and substrates, and allows mixing-and-matching of shadow masks within a single evaporation.
| Size | 75 mm x 75 mm |
| Thickness | 2 mm (exc. bolts) |
| Material | Lower support: milled aluminum Lid: stainless steel Magnetic sheet: vinyl-laminated polymer resin with ferrite powder |
| Substrate capacity | Square design: 12 substrates |
Architecture of an Evaporation Stack
The diagram below shows an deconstructed view of how the evaporation stack fits together. At the base of the system is the lower support, which prevents the thin and flexible shadow masks from warping. This support has recesses in which individual masks are placed with the substrates placed on top of them. The lid is used to bolt everything together into a mechanically stable system that can be mounted in a deposition system at any orientation. Finally, a thick, low strength magnetic sheet is placed on to pull the shadow mask in close contact with the substrates.
Technical Drawing
System Overview
Schematic diagrams showing how the high-density FET evaporation masks work together for:
For interdigitated FETs, the source-drain, active area, and gate masks need to be replaced with the corresponding versions.