Silver Indium Phosphorus Sulfide (AgInP2S6) Powder
2D Materials, Low Dimensional Materials, Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Phosphorus Chalcogenides (TMPCs)
High purity AgInP2S6 powder
Used to process quantum dot solutions and nano-plates into few-layer films
Technical Data | MSDS | Structure | Literature and Reviews | Related Products | Resources and Support
Silver indium phosphorus sulfide (AgInP2S6) belongs to the hexachalcogenohypodiphosphates family. AgInP2S6 has a layered structure like most of the other layered materials, i.e. graphite.
AgInP2S6 a typical Transition metal thio/selenophosphates (TPS) with a rhombohedral structure that contains a sulfur framework with the octahedral voids filled by Ag, In, and P–P triangular patterns.
Atomically thin AgInP2S6 layers can be synthesized through a facile probe sonication exfoliation of either bulk crystals or powder.
High Purity
≥99.995% AgInP2S6 Powder
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Low Cost
Low Cost AgInP2S6
Applications
Process quantum dot solutions and nano-plates into few-layer films
Technical Data
| CAS Number | N/A |
| Chemical Formula | AgInP2S6 |
| Molecular Weight | 477.03 g/mol |
| Bandgap | Eg = ~2.4 eV eV [1] |
| Preparation | Synthetic - Chemical Vapour Transport (CVT) |
| Structure | Rhombohedral |
| Electronic Properties | 2D semiconductor |
| Melting Point | N/A |
| Colour | Silver/Dark Grey |
| Classification / Family | Metal phosphorus trichalcogenides (MPTs), Hexachalcogenohypodiphosphates, 2D semiconductor materials, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials science |
Product Details
| Form | Purity |
|---|---|
| Powder | ≥99.995% |
Pricing Table
| Product Code | Form | Quantity | Price |
|---|---|---|---|
| M2325C1 | Powder | 500 mg | £220 |
| M2325C1 | Powder | 1 g | £350 |
MSDS Document
Silver indium phosphorus sulfide powder
Structure of Silver Indium Phosphorus Disulfide Powder
Bulk AgInP2S6 crystallizes in rhombohedral structure and it is non-centrosymmetric with two non-equivalent packet layers in the unit cell. Both metal Ag and In atoms are coordinated with six S atoms and P atoms are tetrahedral coordinated to form a binuclear [P2S6] 4- cluster which are located in the centre of hexagon composed by alternative three Ag atoms and three In atoms. The metal (Ag and In) layers are sandwiched by two layers of S atoms, while the [P2S6] 4- pairs act as stanchions inside the layer.
In the bulk and multilayer samples, the neighbouring layers are coupled by van der Waals interactions. The [P2S6] dumbbell pairs and Ag atoms stack alternately in the nearby two layers, leading to the AB stacking order of the adjacent layers.
Literature and Reviews
- Vacancy-defect modulated pathway of photoreduction of CO2 on single atomically thin AgInP2S6 sheets into olefiant gas, W. Gao et al., Nat Commun 12, 4747 (2021); DOI: 10.1038/s41467-021-25068-7.
- Second-harmonic generation in quaternary atomically thin layered AgInP2S6 crystals, X. Wang et al., Appl. Phys. Lett., 109, 123103 (2016); DOI: 10.1063/1.4962956.
- Structural, electronic, vibration and elastic properties of the layered AgInP2S6 semiconducting crystal –DFT approach, T. Babuka et al., RSC Adv., 8, 6965 (2018); DOI: 10.1039/c7ra13519j.
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