Tantalum (V) Oxide Powder
CAS Number 1314-61-0
Inorganic Electronic Materials, Metal Oxides, Perovskite Interface MaterialsA dielectric metal oxide
with high dielectric constant for a wide range of applications including capacitors, solar cells, and batteries, Ta2O5
Overview | Product Information | Related Products
Tantalum (V) oxide (CAS number 1314-61-0), commonly known as tantalum pentoxide, is a dielectric material with a high dielectric constant of 22-25 (amorphous). Owing to its high dielectric constant, tantalum oxide is widely used in the production of capacitors. Tantalum oxide is also used as a gate dielectric in cadmium sulfide (CdS) field-effect transistors (FETs), demonstrating an electron mobility of 2.97 cm2/V·s with a low threshold voltage of 1.0 V.
Tantalum oxide also serves as electron transport layers and passivation layers in perovskite solar cells. Ta2O5 enhances the open-circuit voltage of mesoscopic perovskite solar cells, contributing to an excellent power conversion efficiency (PCE) of 21.3% (FTO/mesoporous-TiO2/Ta2O5/perovskite/spiro-OMeTAD/Au).
A dielectric metal oxide
with high dielectric constant 22–25
Multifunctional material
applied in FETs, solar cells, and capacitors
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High Purity
99.9%
General Information
CAS Number | 1314-61-0 |
---|---|
Chemical Formula | Ta2O5 |
Full Name | Ditantalum pentaoxide |
Molecular Weight | 441.89 g/mol |
Melting Point | 1800 °C |
Synonyms | Tantalum pentoxide, Tantalum oxide |
Classification or Family | Dielectric materials, Capacitors, FETs, Perovskite interlayer materials, Perovskite solar cells |
Product Details
Purity | 99.9% |
---|---|
Particles Size | 100 – 200 nm |
Appearance | Off-white powder |
MSDS Documentation
Tantalum (V) Oxide Powder MSDS Sheet
References
- Implementation of low-power electronic devices using solution-process tantalum pentoxide dielectric, J. Heo et al., 28 (18), 1704215 (2018); DOI: 10.1002/adfm.201704215.
- Review of anodic tantalum oxide nanostructures: from morphological design to emerging applications, B. Mohapatra et al., ACS Appl. Nano Mater., 7, 13865–13892 (2024); DOI: 10.1021/acsanm.4c02000.
- Interface engineering of mesoscopic perovskite solar cells by atomic layer deposition of Ta2O5, R. Chavan et al., ACS Appl. Energy Mater., 4 (10), 10433–10441 (2021); DOI: 10.1021/acsaem.1c00367.
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