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TFB CAS 220797-16-0
Product Code M0981A3-100mg
Price £280 ex. VAT
£ GBP

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TFB, semiconducting polymer with high mobility

HTL and HIL material for organic electronic devices

Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB), CAS number 220797-16-0, is a triarylamine based semiconductor with a band gap of 3.0 eV (HOMO and LUMO levels of 5.3 eV and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10-3 cm2 V-1 s-1.

Ossila's TFB was used in the a high impact paper (IF 38.77)

TFB from Ossila was used in the high-impact paper (IF 38.77), Rational molecular passivation for high-performance perovskite light-emitting diodes, W. Xu et al., Nat. Photonics, 13, 418–424 (2019); DOI: 10.1038/s41566-019-0390-x.

Due to its low ionisation potential and high hole mobility, TFB serves primarily as hole transport layer (HTL), hole-injection layer (HIL) and electron-blocking layer (EBL) material in organic electronic devices. When built into device as an interface material, TFB as an electron blocking layer will not only reduce the chance of electron leakage, but also reduce the possibility of exciton quenching between the interface of the active layer and charge transport layer (F8BT/MoOx for example).

General Information

CAS Number 220797-16-0
Chemical Formula (C51H61N)n
Absorption* λmax 390 nm (in THF)
Fluorescence λem 295 nm, 435 nm (in THF)
HOMO/LUMO HOMO = 5.3 eV, LUMO = 2.3 eV
Solvents THF, Toluene and Chloroform
Synonyms Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine)
Classification / Family Hole transport material (HTL), Hole injection material (HIL), Electron blocking material (EBL), OLEDs, Perovskite solar cells, Organic and printed electronics

* Measurable with the Ossila Optical Spectrometer, see our spectrometers and accessories for more information.

Product Details

Purity >99%
Melting Point N/A
Colour Pale yellow powder/fibers

Chemical Structure

polymer TFB chemical structure
Chemical Structure of Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB)

Device Structure(s)

Device Structure ITO (120 nm)/PEDOT:PSS(50 nm)/TFB (5 nm)/PYGTPA* (75 nm)/PEGPF* (10 nm)/Ca (10 nm)/Al (100 nm) [1]
Colour deep blue light emitting device  Deep Blue
Max. luminance 9,242 cd/m2
Max. Current Efficiency 0.85 cd/A
Bias 4.3 V
Device Structure ITO/c-ZnO (50 nm)/F8BT (80 nm)/MoO3 (10 nm)/Au (50 nm) [2] ITO/c-ZnO (50 nm)/F8BT (80 nm)/TFB (60 nm)/MoO3 (10 nm)/Au (50 nm) [2]
Colour green light emitting device  Green green light emitting device  Green
Max. luminance 9,370 cd/m2 16,460 cd/m2
Max. Current Efficiency 0.34 cd/A 0.93 cd/A
Bias ~0.60 V ~0.87 V
Device Structure ITO/ZnO/CsPbI3/TFB (60 nm)/MoO3 (5 nm)/Ag (80 nm) [3]
Colour red light emitting device  Red
Max. Luminance 206 cd/m2
Max. EQE 5.7%

*For chemical structure informations please refer to the cited references.

MSDS Documentation

D18 MSDSTFB MSDS Sheet

Pricing

Batch Quantity Price
M0981A 100 mg £280
M0981A 250 mg £560
M0981A 500 mg £900

Batch details

Batch Number* Mw Mn PDI Stock Info
M0981A1 42 kDa 16.8 kDa 2.5 Discontinued
M0981A2 40 kDa 13.8 kDa 2.9 Discontinued
M0981A3 50 kDa 30 kDa 1.65 In Stock

*Older batch information available on request.

Literature and Reviews

  1. All-solution-processed multilayer polymer/dendrimer light emitting diodes, M. Auer-Berger et al., Org. Electronics, 35, 164-170 (2016); http://dx.doi.org/10.1016/j.orgel.2016.04.044.
  2. High Efficiency Composite Metal Oxide-Polymer Electroluminescent Devices: A Morphological and Material Based Investigation, D. Kabra et al., Adv. Mater., 20, 3447–3452 (2008); DOI: 10.1002/adma.200800202.
  3. Highly Efficient Perovskite Nanocrystal Light-Emitting Diodes Enabled by a Universal Crosslinking Method, G. Li et al., adv. Mater., 28, 3528–3534 (2016); DOI: 10.1002/adma.201600064.
  4. A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes, H. Yan et al., Appl. Phys. Lett., 84, 3873 (2004); doi: 10.1063/1.1737791.
  5. Spin-cast thin semiconducting polymer interlayer for improving device efficiency of polymer light-emitting diodes, J-S. Kim et al., Appl. Phys. Lett., 87, 023506 (2005); doi: 10.1063/1.1992658.
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