HATCN

HATCN, HIL material for enhancing the performance of OLEDs

Able to prevent interfacial mixing and erosion during fabrication

Overview | Specifications | Pricing and Options | MSDS | Literature and Reviews

1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile, also known as HAT-CN (CAS number 105598-27-4), is one of the members of the 1,4,5,8,9,12-hexaazatriphenylene (HAT) family, which have an electron-deficient, rigid, planar, aromatic discotic system with an excellent π–π stacking ability. For this reason, HAT-CN finds applications in organic light-emitting diodes (OLEDs) serving either as the hole-injection layer (HIL) or charge-generation layer (CGL) material.

HATCN from Ossila was used in the high-impact paper (IF 7.059), Synergistic effects of charge transport engineering and passivation enabling efficient inverted perovskite quantum-dot light-emitting diodes, J. Pan et al., J. Mater. Chem. C, 8, 5572-5579 (2020); DOI: 10.1039/D0TC00661K.

It has been proven that using HAT-CN as a hole injection layer (HIL) material can dramatically enhance the performance of solution-processed organic light-emitting diodes [2]. Lin et al further demonstrated that the external quantum efficiency, current efficiency, and power efficiency of the HAT-CN based devices were higher than or almost similar to those of optimised PEDOT:PSS-based devices. Solution-processed HAT-CN is promising as a novel alternative to conventional PEDOT:PSS HILs, due to its efficient carrier-injection capability and the capacity to prevent interfacial mixing and erosion during fabrication.

General Information

Product Details

Chemical Structure

Device Structure(s)

The following are all PEDOT:PSS free devices.

Device Structure	ITO/HAT-CN(10 nm)/HAT-CN:TAPC(2:1, 60 nm)/TAPc(20 nm)/TcTa:Be(pp)2:Ir(mppy)3(1:1:8 wt% 10 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq(1 nm)/Al(1 nm)/HAT-CN(20 nm)/HAT-CN:TAPC(2:1, 10 nm)/TAPC(40 nm)/ TcTa:Be(pp)2:Ir(mppy)3(1:1:8 wt% 10 nm)/Be(pp)2(15 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq(1 nm)/Al(100 nm) [1]
Colour	Green
Max. Current Efficiency	241 cd/A
Max. Power Efficiency	143 lm W−1

Device Structure	ITO/HAT-CN (10 nm)/TAPC (45 nm)/BCzSCN*:FIrpic:PO-01 (8 wt%, 0.5 wt%, 20 nm)/TmPyPB (50 nm)/Liq (2 nm)/Al (120 nm) [3]
Colour	Blue
Max. EQE	22%
Max. Current Efficiency	66.0 cd/A
Max. Power Efficiency	64.0 lm W−1

Device Structure	ITO/HAT-CN (10 nm)/TAPC (45 nm)/mCP:Ir(dbi)3 10 wt% (20 nm)/TmPyPB (40 nm)/Liq (2 nm)/Al (120 nm) [4]
Colour	Sky Blue
Max. EQE	23.1%
Max. Current Efficiency	61.5 cd/A
Max. Power Efficiency	43.7 lm W−1

Device Structure	ITO (150 nm)/HAT-CN (4 nm)/VB-FNPD* (35 nm)/TCTA:Ir(mppy)3 10 wt% (20 nm)/TPBi (60 nm)/ CsF (1 nm)/Al (120 nm) [5]
Colour	Green
Max. EQE	14.7%
Max. Current Efficiency	50.9 cd/A
Max. Power Efficiency	55.0 lm W−1

Device Structure	Graphene (2–3 nm)/TAPC(30 nm)/HAT-CN(10 nm)/TAPC(30 nm)/HAT-CN(10 nm)/TAPC(30 nm)/ TCTA:FIrpic (5 nm)/DCzPPy: FIrpic (5 nm)/BmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) [6]
Colour	Blue
Max. EQE	15.1%
Max. Power Efficiency	14.5 lm W−1

Device Structure	ITO/HATCN (5 nm)/NPB (40 nm)/TCTA (10 nm)/mCP:6 wt%2CzPN (11 nm)/TAZ:4 wt% PO-01 (4 nm)/TAZ (40 nm)/LiF (0.5 nm)/Al (150 nm) [7]
Colour	White
Max. EQE	38.4%
Max. Power Efficiency	80.1 lm W−1

Device Structure	Ag (100 nm)/ITO (10 nm)/DNTPD* (30 nm)/NPB (44 nm)/Bebq2:3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (31 nm)/Bphen: 5 wt% Li (10 nm)/HATCN (7 nm)/NPB (63 nm)/Bebq2: 3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (40 nm)/Liq (1 nm)/Mg:Ag (10:1; 18 nm)/NPB (60 nm) [8]
Colour	Red
Max. EQE	26.5%
Max. Current Efficiency	95.8 cd/A

Device Structure	ITO/HATCN (5 nm)/NPB (30 nm)/TCTA (10 nm)/mCP (10 nm)/DMAC-DPS:PO-01* (0.8 wt% 30 nm)/DPEPO (10 nm)/Bphen (30 nm)/LiF (0.5 nm)/Al(150 nm) [9]
Colour	White
Max. EQE	20.8%
Max. Power Efficiency	51.2 lm W−1

*For chemical structure information please refer to the cited references.

Pricing

MSDS Documentation

HATCN MSDS sheet

Literature and Reviews

1. Highly efficient and stable tandem organic light-emitting devices based on HAT-CN/HAT-CN:TAPC/TAPC as a charge generation layer, Y. Dai et al., J. Mater. Chem. C, 3, 6809-6814 (2015);DOI: 10.1039/C4TC02875A.
2. Solution-processed hexaazatriphenylene hexacarbonitrile as a universal hole-injection layer for organic light-emitting diodes, H. Lin et al., Org. Electronics 14, 1204–1210 (2013); http://dx.doi.org/10.1016/j.orgel.2013.02.011.
3. Bipolar host materials for high efficiency phosphorescent organic light emitting diodes: tuning the HOMO/LUMO levels without reducing the triplet energy in a linear system, L. Cui et al., J. Mater. Chem. C, 1, 8177-8185 (2013); DOI: 10.1039/C3TC31675K.